Specific Process Knowledge/Thin film deposition/Deposition of Aluminium: Difference between revisions
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See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]]. | See details of the study [[/Aluminium deposition on ZEP520A for lift-off|here]]. | ||
==Aluminium deposition on AZ5214 for lift-off== | ==Aluminium deposition on AZ5214 for lift-off== | ||
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It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath. | It was tried(jan09) to lift 2,5µ Al on 4,2µ negative resist on top of 11µ Apox SiO2 in acetone sonic-bath. | ||
This process was done in steps evaporating 5000Å a time with 5min pause and pressure down to at least 2E-6. | This process was done in steps evaporating 5000Å a time with 5min pause and pressure down to at least 2E-6. | ||
==Comparison of roughness and other surface characteristics for different methods of Aluminium deposition== | |||
Studies by AFM was performed to examine differences in characteristics of the Al films, deposited with the differnt methods (sputter, e-beam, thermal). See details of the study [[/Comparison of roughness and other surface characteristics for different methods of Aluminium deposition|here]]. | |||