Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
| Line 48: | Line 48: | ||
*One view: 127µmX95µm to 1270µmX955µm | *One view: 127µmX95µm to 1270µmX955µm | ||
*Stitching: In principel a hole 6" wafer (time consuming) | *Stitching: In principel a hole 6" wafer (time consuming) | ||
|Only 10x objective: | |Only 10x objective: 2.0 mm x 1.7 mm | ||
|90 µm square | |90 µm square | ||
|Line scan x: 50-50000 µm | |Line scan x: 50-50000 µm | ||