Specific Process Knowledge/Characterization/Topographic measurement: Difference between revisions
No edit summary |
|||
Line 24: | Line 24: | ||
![[Specific Process Knowledge/Characterization/Profiler#Dektak XTA_new_stylus_profiler|Dektak XTA_new stylus profiler]] | ![[Specific Process Knowledge/Characterization/Profiler#Dektak XTA_new_stylus_profiler|Dektak XTA_new stylus profiler]] | ||
![[Specific Process Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar)|Optical Profiler (Sensofar)]] | ![[Specific Process Knowledge/Characterization/Profiler#Optical_Profiler_(Sensofar)|Optical Profiler (Sensofar)]] | ||
![[Specific Process Knowledge/Characterization/Profiler#Optical_Profiler_(Filmetrics)|Optical Profiler (Filmetrics)]] | |||
![[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM Icon]] | ![[Specific Process Knowledge/Characterization/AFM: Atomic Force Microscopy|AFM Icon]] | ||
![[Specific Process Knowledge/Characterization/Profiler#Dektak III-V Profiler|Dektak 3ST]] | ![[Specific Process Knowledge/Characterization/Profiler#Dektak III-V Profiler|Dektak 3ST]] | ||
Line 33: | Line 34: | ||
|Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | |Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | ||
|Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | |Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | ||
|3D Profiler for measuring micro structures and surface roughness. Can do wafer mapping. | |||
|3D Profiler for measuring micro structures and surface roughness. Can do wafer mapping. | |3D Profiler for measuring micro structures and surface roughness. Can do wafer mapping. | ||
|AFM for measuring nanostructures and surface roughness | |AFM for measuring nanostructures and surface roughness | ||
Line 45: | Line 47: | ||
|Depending on the objective: | |Depending on the objective: | ||
*One view: 127µmX95µm to 1270µmX955µm | *One view: 127µmX95µm to 1270µmX955µm | ||
|Only 10x objective: | |||
*Stitching: In principel a hole 6" wafer (time consuming) | *Stitching: In principel a hole 6" wafer (time consuming) | ||
|90 µm square | |90 µm square | ||
Line 56: | Line 59: | ||
|50Å to 1mm | |50Å to 1mm | ||
|Depending on the objective and Z resolution: | |Depending on the objective and Z resolution: | ||
*94. | *94.4 µm ->9984 µm | ||
|10 mm | |||
|1 µm (can go up to 5 µm under special settings) | |1 µm (can go up to 5 µm under special settings) | ||
|130 nm | |130 nm | ||
Line 66: | Line 70: | ||
|Depending on the objective: | |Depending on the objective: | ||
*0.5µm -> 5µm | *0.5µm -> 5µm | ||
|? | |||
|Depending on scan size and number of samples per line and number of lines - accuracy better than 2% | |Depending on scan size and number of samples per line and number of lines - accuracy better than 2% | ||
| | | | ||
Line 79: | Line 84: | ||
*VSI down to 1 nm | *VSI down to 1 nm | ||
*Confocal (depending on objective): 1nm -> 50nm | *Confocal (depending on objective): 1nm -> 50nm | ||
| | |||
*PSI down to ? nm | |||
*VSI down to ? nm | |||
|<1Å - accuracy better than 2% | |<1Å - accuracy better than 2% | ||
| | | | ||
Line 88: | Line 96: | ||
|Depending on material and trench width: | |Depending on material and trench width: | ||
*Somewhere between 1:1 and 1:12 | *Somewhere between 1:1 and 1:12 | ||
|? | |||
|~1:1 with standard cantilever. | |~1:1 with standard cantilever. | ||
| | | | ||
Line 97: | Line 106: | ||
|5 µm 45<sup>o</sup> cone | |5 µm 45<sup>o</sup> cone | ||
|5 µm 45<sup>o</sup> cone | |5 µm 45<sup>o</sup> cone | ||
|No tip - using light | |||
*Blue monochromatic LED: 460nm | |||
*White broadband LED: 550nm | |||
|No tip - using light | |No tip - using light | ||
*Blue monochromatic LED: 460nm | *Blue monochromatic LED: 460nm | ||
Line 109: | Line 121: | ||
|Can be done | |Can be done | ||
|No stress calculation capability | |No stress calculation capability | ||
|Cannot be done | |||
|Cannot be done | |Cannot be done | ||
|Cannot be done | |Cannot be done | ||
Line 118: | Line 131: | ||
|Can be done on a line scan | |Can be done on a line scan | ||
|Can be done on a line scan | |Can be done on a line scan | ||
|Can be done on a line or an area | |||
|Can be done on a line or an area | |Can be done on a line or an area | ||
|Can be done on a selected surface area | |Can be done on a selected surface area | ||
Line 129: | Line 143: | ||
|up to 6" | |up to 6" | ||
|Up to more than 6" | |Up to more than 6" | ||
|100x100 mm | |||
|6" or less | |6" or less | ||
|4" or less | |4" or less | ||
Line 136: | Line 151: | ||
|-style="background:WhiteSmoke; color:black" | |-style="background:WhiteSmoke; color:black" | ||
!'''Allowed materials''' | !'''Allowed materials''' | ||
| | |||
*Almost any material that does not leave residual on the stage, please check the responsible group for any non standard materials | |||
| | | | ||
*Almost any material that does not leave residual on the stage, please check the responsible group for any non standard materials | *Almost any material that does not leave residual on the stage, please check the responsible group for any non standard materials |
Revision as of 07:13, 14 April 2020
Feedback to this page: click here
Topographic measurements are measurements were you can measure hight differences on your substrate. If you measure in many spots of the substrate you can get a topographic image of the substrate.
At DTU Nanolab we have five systems for topographic measurements:
- Dektak stylus profilers (Dektak XTA, Dektak 3ST and Dektak 8) - Profiler for measuring micro structures
- Optical Profiler (Sensofar) - 3D Profiler for measuring micro structures
- Nanoman - AFM for measuring nano structures
High Aspect ratio structures
The fact that the tips of the Dektak profilers and the AFM are shaped like a cone with some tip angle causes a problem when characterizing high aspect ratio structures. For instance, if a 20 µm wide trench is etched deeper than approximately 18 µm, the tip of the Dektak will not be able to reach the bottom. The optical profiler uses a light beam that is focused through an objective. Therefore it is able to measure higher aspect ratios. The aspect ratio is limited by the possibility for the light to reach the bottom and get back to the detector. On some samples we have been able to measure aspect ratios above 1:10. Otherwise the solution is to cleave the sample along a line that is perpendicular to the trench and then inspect the profile in a scanning electron microscope or a microscope (for large structures).
Comparison of the two stylus profilers, the optical profiler and the AFM
Dektak 8 stylus profiler | Dektak XTA_new stylus profiler | Optical Profiler (Sensofar) | Optical Profiler (Filmetrics) | AFM Icon | Dektak 3ST | |
---|---|---|---|---|---|---|
Generel description | Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | Profiler for measuring micro structures. Can do wafer mapping and stress measurements. | 3D Profiler for measuring micro structures and surface roughness. Can do wafer mapping. | 3D Profiler for measuring micro structures and surface roughness. Can do wafer mapping. | AFM for measuring nanostructures and surface roughness | Profiler for measuring micro structures. |
Max. scan range xy | Line scan x: 50µm to 200mm | Line scan x: 50µm to 55mm in one scan. Maximum scan lenght with stiching 200mm. | Depending on the objective:
|
Only 10x objective:
|
90 µm square | Line scan x: 50-50000 µm |
Max. scan range z | 50Å to 1mm | 50Å to 1mm | Depending on the objective and Z resolution:
|
10 mm | 1 µm (can go up to 5 µm under special settings) | 130 nm |
Resolution xy | down to 0.067 µm | down to 0.003 µm | Depending on the objective:
|
? | Depending on scan size and number of samples per line and number of lines - accuracy better than 2% | |
Resolution z | 1Å, 10Å, 40Å or 160Å | 1Å, 10Å, 80Å or 160Å | Depending on measuring methode:
|
|
<1Å - accuracy better than 2% | |
Max. scan depth [µm] (as a function of trench width W) | 1.2*(W[µm]-5µm) | 1.2*(W[µm]-5µm) | Depending on material and trench width:
|
? | ~1:1 with standard cantilever. | |
Tip radius | 5 µm 45o cone | 5 µm 45o cone | No tip - using light
|
No tip - using light
|
<12 nm on standard cantilever | |
Stress measurement | Can be done | Can be done | No stress calculation capability | Cannot be done | Cannot be done | Cannot be done |
Surface roughness | Can be done on a line scan | Can be done on a line scan | Can be done on a line or an area | Can be done on a line or an area | Can be done on a selected surface area | Recommended to use Dektak XTA or Dektak 8. |
Substrate size | up to 8" | up to 6" | Up to more than 6" | 100x100 mm | 6" or less | 4" or less |
Allowed materials |
|
|
|
|
|
|