Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions

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 == Deposition of Titanium Nitride ==
-Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] or [[Specific Process Knowledge/Thin film deposition/Lesker|reactive sputtering]] methods.
+Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] or [[Specific Process Knowledge/Thin film deposition/Lesker|reactive sputtering]] methods. If sputtering method is used the target is Ti and nitrogen (N<sub>2</sub>) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample.
-*Information about the ALD process can be found [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|here]].
+*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|TiN deposition using ALD]].
-If sputtering method is used the target is Ti and nitrogen (N<sub>2</sub>) is added as reactive gas to the chamber resulting the formation of Titanium Nitride on the sample.
-*Information about the sputtering method can be found [[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|here]].
+*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|TiN deposition using reactive sputtering]].
 ==Comparison between sputtering and ALD methods for deposition of Titanium Nitride.==