Specific Process Knowledge/Characterization/XPS/K-Alpha: Difference between revisions

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*[[Specific Process Knowledge/Characterization/XPS/XPS Chemical states |Chemical sensitivity]]
*[[Specific Process Knowledge/Characterization/XPS/XPS Chemical states |Chemical sensitivity]]
*[[Specific Process Knowledge/Characterization/XPS/XPS Depth profiling|Depth profiling]]
*[[Specific Process Knowledge/Characterization/XPS/XPS Depth profiling|Depth profiling]]
*[[/Carbon contamination|Carbon contamination]]
*[[Specific Process Knowledge/Characterization/XPS/Carbon contamination|Carbon contamination]]


*[[Specific Process Knowledge/Characterization/XPS/ExtDocs | Links to external material ]]
*[[Specific Process Knowledge/Characterization/XPS/ExtDocs | Links to external material ]]

Revision as of 15:50, 6 April 2020

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The XPS K-Alpha

Name: XPS K-Alpha
Vendor: Thermofisher
The XPS K-Alpha allows you to analyse a broad range of samples with the XPS technique.

The user manual(s), user APV(s), technical information and contact information are be found in LabManager:

XPS K-Alpha in LabManager

Elemental analysis

The XPS instrument enables elemental analysis, chemical state analysis on the sample surface or deeper down by a depth profiling. A comparison about techniques and instruments used for elemental analysis at DTU Nanolab can be found on the page Element analysis.

More about the different possibilities of the XPS instrument is found here:

Getting access to the XPS

Click HERE to see information on how to get access to the XPS.

Performance of XPS K-Alpha

Purpose Chemical analysis
Performance Spot size Can be set between 30µm - 400µm
Probing depth Depending on probed element. Max probe depth lies within 10-200 Å.
Resolution Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
Charge compensation

Flood gun can be used for charge compensation of non conductive samples

Finding structures Choose measuring spot from camera image (magnified)
Depth profiling Purpose With ion beam etch the top layer of the material can be removed, to do a depth profiling
Ion beam size About 3x1 mm
Substrates Substrate size

Maximum 60x60 mm

Substrate thickness

Maximum height about 20 mm