Specific Process Knowledge/Characterization/XPS/K-Alpha: Difference between revisions

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 <!-- give the link to the equipment info page in LabManager: -->
 [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=276  XPS K-Alpha in LabManager]
+==Elemental analysis==
+The XPS instrument enables elemental analysis, chemical state analysis on the sample surface or deeper down by a depth profiling. A comparison about techniques and instruments used for elemental analysis at DTU Nanolab can be found on the page [[Specific Process Knowledge/Characterization/Element analysis|Element analysis]].
+More about the different possibilities of the XPS instrument is found here:
+*[[Specific Process Knowledge/Characterization/XPS/XPS technique|The XPS technique]]
+*[[Specific Process Knowledge/Characterization/XPS/XPS elemental composition|Elemental analysis]]
+*[[Specific Process Knowledge/Characterization/XPS/XPS Chemical states |Chemical sensitivity]]
+*[[Specific Process Knowledge/Characterization/XPS/XPS Depth profiling|Depth profiling]]
+*[[/Carbon contamination|Carbon contamination]]
+*[[Specific Process Knowledge/Characterization/XPS/ExtDocs | Links to external material ]]
+== Getting access to the XPS ==
+Click [[Specific Process Knowledge/Characterization/XPS/Access | '''HERE''' ]] to see information on how to get access to the XPS.
+== Performance of XPS K-Alpha ==
+{| border="2" cellspacing="0" cellpadding="1" |-
+!style="background:silver; color:black;" align="left"|Purpose
+|style="background:LightGrey; color:black"|Chemical analysis
+|style="background:WhiteSmoke; color:black"|
+* [[Specific Process Knowledge/Characterization/XPS/XPS elemental composition|Probing elemental composition]]
+* [[Specific Process Knowledge/Characterization/XPS/XPS Chemical states |Chemical state identification]]
+* Non destructive technique
+* Surface sensitive
+* [[Specific Process Knowledge/Characterization/XPS/XPS Depth profiling|Depth profiling]] possible by ion beam etch of sample
+|-
+!rowspan="5" style="background:silver; color:black" align="left"| Performance
+|style="background:LightGrey; color:black"|Spot size
+|style="background:WhiteSmoke; color:black"|Can be set between 30µm - 400µm
+|-
+|style="background:LightGrey; color:black"|Probing depth
+|style="background:WhiteSmoke; color:black"|Depending on probed element. Max probe depth lies within 10-200 Å.
+|-
+|style="background:LightGrey; color:black"|Resolution
+|style="background:WhiteSmoke; color:black"|Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
+|-
+|style="background:LightGrey; color:black"|Charge compensation
+|style="background:WhiteSmoke; color:black"|
+Flood gun can be used for charge compensation of non conductive samples
+|-
+|style="background:LightGrey; color:black"|Finding structures
+|style="background:WhiteSmoke; color:black"|Choose measuring spot from camera image (magnified)
+|-
+|-
+|-
+!rowspan="2" style="background:silver; color:black" align="left"|Depth profiling
+|style="background:LightGrey; color:black"|Purpose
+|style="background:WhiteSmoke; color:black"|With ion beam etch the top layer of the material can be removed, to do a depth profiling
+|-
+|style="background:LightGrey; color:black"|Ion beam size
+|style="background:WhiteSmoke; color:black"| About 3x1 mm
+|-
+!rowspan="2" style="background:silver; color:black" align="left"|Substrates
+|style="background:LightGrey; color:black"|Substrate size
+|style="background:WhiteSmoke; color:black"|
+Maximum 60x60 mm
+|-
+| style="background:LightGrey; color:black"|Substrate thickness
+|style="background:WhiteSmoke; color:black"|
+Maximum height about 20 mm
+|-
+|}