Specific Process Knowledge/Characterization/XPS: Difference between revisions

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!style="background:silver; color:black;" align="left" |[[Specific Process Knowledge/Characterization/XPS/Nexsa |Nexsa]]
!style="background:silver; color:black;" align="left" |[[Specific Process Knowledge/Characterization/XPS/Nexsa |Nexsa]]
|-  
|-  
!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left" rowspan="2"|Purpose  
|style="background:LightGrey; color:black"|Chemical analysis
|style="background:LightGrey; color:black"|Main
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"| XPS analysis using monochromated Al-Kα radiation at 1486.6 eV
* [[Specific Process Knowledge/Characterization/XPS/XPS elemental composition|Probing elemental composition]]
|style="background:WhiteSmoke; color:black"| XPS analysis using monochromated Al-Kα radiation at 1486.6 eV
* [[Specific Process Knowledge/Characterization/XPS/XPS Chemical states |Chemical state identification]]
|-
* Non destructive technique
 
* Surface sensitive
|style="background:LightGrey; color:black"|Alternative/complementary
* [[Specific Process Knowledge/Characterization/XPS/XPS Depth profiling|Depth profiling]] possible by ion beam etch of sample
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|  
* Workfunction measurements
* Ultraviolet Photoelectron Spectroscopy (UPS) with He I and He II UV source
* Ion Scattering Spectroscopy (ISS)
* Reflected Electron Energy Loss Spectroscopy
* Angular Resolved Ultraviolet Photoelectron Spectroscopy (ARUPS)
|-
|-
!rowspan="5" style="background:silver; color:black" align="left"| Performance
!rowspan="6" style="background:silver; color:black" align="left"| Performance
|style="background:LightGrey; color:black"|Spot size
|style="background:LightGrey; color:black"|Spot size
|style="background:WhiteSmoke; color:black"|Can be set between 30µm - 400µm
|style="background:WhiteSmoke; color:black"|XPS: 30µm - 400µm
|style="background:WhiteSmoke; color:black"|
* XPS: 10µm - 400µm
* Raman: > 15 µm
|-
|-
|style="background:LightGrey; color:black"|Probing depth
|style="background:LightGrey; color:black"|Pass energy
|style="background:WhiteSmoke; color:black"|Depending on probed element. Max probe depth lies within 10-200 Å.
|style="background:WhiteSmoke; color:black"|10-400 eV|style="background:WhiteSmoke; color:black"|10-400 eV (XPS and ISS)
|-
|-
|style="background:LightGrey; color:black"|Resolution
|style="background:LightGrey; color:black"|Analysis modes
|style="background:WhiteSmoke; color:black"|Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
|style="background:WhiteSmoke; color:black"|Scanned and snapshot
|style="background:WhiteSmoke; color:black"|Scanned, snapshot and SnapMap
|-
|-
|style="background:LightGrey; color:black"|Charge compensation  
|style="background:LightGrey; color:black"|Charge compensation  

Revision as of 14:32, 6 April 2020

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The XPS tools at DTU Nanolab

The K-Alpha from 2007 is one of the first instruments of this type that was produced.
The Nexsa from 2019 is on the surface very similar to the K-Alpha. It's panels, however, hide a whole range of supplementary techniques.


In the basement under the cleanroom two X-ray Photoelectron Spectroscopy (XPS) systems are installed back-to-back in the center of room 904. They are both manufactured by Thermofisher and they enable the users to perform elemental and chemical analysis of samples. The XPS K-Alpha is a base technique instrument providing XPS analysis. The XPS Nexsa is an upgraded version with all options.

Elemental analysis

The XPS instrument enables elemental analysis, chemical state analysis on the sample surface or deeper down by a depth profiling. A comparison about techniques and instruments used for elemental analysis at DTU Nanolab can be found on the page Element analysis.

More about the different possibilities of the XPS instrument is found here:

Getting access to the XPS tools

Click HERE to see information on how to get access to the XPS.

Analyzing XPS spectra

The analysis of XPS spectra is an art in itself. Click on the link below to find a some examples in which the Avantage software package has been used to extract information from experiments.

Techniques and option on the XPS tools

Equipment K-Alpha Nexsa
Purpose Main XPS analysis using monochromated Al-Kα radiation at 1486.6 eV XPS analysis using monochromated Al-Kα radiation at 1486.6 eV
Alternative/complementary
  • Workfunction measurements
  • Ultraviolet Photoelectron Spectroscopy (UPS) with He I and He II UV source
  • Ion Scattering Spectroscopy (ISS)
  • Reflected Electron Energy Loss Spectroscopy
  • Angular Resolved Ultraviolet Photoelectron Spectroscopy (ARUPS)
Performance Spot size XPS: 30µm - 400µm
  • XPS: 10µm - 400µm
  • Raman: > 15 µm
Pass energy 10-400 eV|style="background:WhiteSmoke; color:black"|10-400 eV (XPS and ISS)
Analysis modes Scanned and snapshot Scanned, snapshot and SnapMap
Charge compensation

Flood gun can be used for charge compensation of non conductive samples

Finding structures Choose measuring spot from camera image (magnified)
Depth profiling Purpose With ion beam etch the top layer of the material can be removed, to do a depth profiling
Ion beam size About 3x1 mm
Substrates Substrate size

Maximum 60x60 mm

Substrate thickness

Maximum height about 20 mm

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