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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers
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!style="background:silver; color:black;" align="left" |[[Specific Process Knowledge/Characterization/XPS/Nexsa |Nexsa]]
!style="background:silver; color:black;" align="left" |[[Specific Process Knowledge/Characterization/XPS/Nexsa |Nexsa]]
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!style="background:silver; color:black;" align="left"|Purpose  
!style="background:silver; color:black;" align="left" rowspan="2"|Purpose  
|style="background:LightGrey; color:black"|Chemical analysis
|style="background:LightGrey; color:black"|Main
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"| XPS analysis using monochromated Al-Kα radiation at 1486.6 eV
* [[Specific Process Knowledge/Characterization/XPS/XPS elemental composition|Probing elemental composition]]
|style="background:WhiteSmoke; color:black"| XPS analysis using monochromated Al-Kα radiation at 1486.6 eV
* [[Specific Process Knowledge/Characterization/XPS/XPS Chemical states |Chemical state identification]]
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* Non destructive technique
 
* Surface sensitive
|style="background:LightGrey; color:black"|Alternative/complementary
* [[Specific Process Knowledge/Characterization/XPS/XPS Depth profiling|Depth profiling]] possible by ion beam etch of sample
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|  
* Workfunction measurements
* Ultraviolet Photoelectron Spectroscopy (UPS) with He I and He II UV source
* Ion Scattering Spectroscopy (ISS)
* Reflected Electron Energy Loss Spectroscopy
* Angular Resolved Ultraviolet Photoelectron Spectroscopy (ARUPS)
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!rowspan="5" style="background:silver; color:black" align="left"| Performance
!rowspan="6" style="background:silver; color:black" align="left"| Performance
|style="background:LightGrey; color:black"|Spot size
|style="background:LightGrey; color:black"|Spot size
|style="background:WhiteSmoke; color:black"|Can be set between 30µm - 400µm
|style="background:WhiteSmoke; color:black"|XPS: 30µm - 400µm
|style="background:WhiteSmoke; color:black"|
* XPS: 10µm - 400µm
* Raman: > 15 µm
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|style="background:LightGrey; color:black"|Probing depth
|style="background:LightGrey; color:black"|Pass energy
|style="background:WhiteSmoke; color:black"|Depending on probed element. Max probe depth lies within 10-200 Å.
|style="background:WhiteSmoke; color:black"|10-400 eV|style="background:WhiteSmoke; color:black"|10-400 eV (XPS and ISS)
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|style="background:LightGrey; color:black"|Resolution
|style="background:LightGrey; color:black"|Analysis modes
|style="background:WhiteSmoke; color:black"|Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
|style="background:WhiteSmoke; color:black"|Scanned and snapshot
|style="background:WhiteSmoke; color:black"|Scanned, snapshot and SnapMap
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|style="background:LightGrey; color:black"|Charge compensation  
|style="background:LightGrey; color:black"|Charge compensation  
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Characterization/XPS"