Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions

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Thin films of titanium nitride can only be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] at the moment. More information about the process can be found [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|here]].
Thin films of titanium nitride can only be deposited in the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]] at the moment. More information about the process can be found [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|here]].


==Only method at the moment for the deposition of titanium nitride.==
==Comparison between sputtering and ALD methods for deposition of Titanium nitride.==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]
![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]]
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|
|
*Atomic Layer Deposition
*Atomic Layer Deposition
|
*Sputtering
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Stoichiometry
!Stoichiometry
|
|
*TiN
*TiN
|
*TiN (can be tuned)
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Film Thickness
!Film Thickness
|
|
* 0nm - 50nm  
* 0nm - 50nm  
|
* 0nm - 200nm
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Deposition rate
!Deposition rate
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* 0.0173 nm/cycle on a flat sample
* 0.0173 nm/cycle on a flat sample
* 0.0232 nm/cycle on a high aspect ratio structures
* 0.0232 nm/cycle on a high aspect ratio structures
|
* up to 0.0625 nm/s on a flat sample
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Step coverage
!Step coverage
|
|
*Very good
*Very good
|
*Not investigated
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Process Temperature
!Process Temperature
|
|
* 450<sup>o</sup>C
* 450<sup>o</sup>C
|
* 400<sup>o</sup>C
|-
|-
|-style="background:LightGrey; color:black"
|-style="background:LightGrey; color:black"
!Substrate size
!Substrate size
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*1-5 100 mm wafers
*1-5 100 mm wafers
*1-5 150 mm wafer
*1-5 150 mm wafer
|
*Several small samples
*100 mm wafer
*150 mm wafer
|-
|-
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!'''Allowed materials'''
!'''Allowed materials'''
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*III-V materials (use dedicated carrier wafer)
*III-V materials (use dedicated carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
*Polymers (depending on the melting point/deposition temperature, use carrier wafer)
|
*Silicon
*Silicon oxide, silicon nitride
*Quartz/fused silica
*Metals
*III-V materials (use dedicated carrier wafer)
*Almost anything that is not toxic.
|-
|-
|}
|}

Revision as of 14:28, 6 April 2020

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Deposition of Titanium nitride

Thin films of titanium nitride can only be deposited in the ALD2 at the moment. More information about the process can be found here.

Comparison between sputtering and ALD methods for deposition of Titanium nitride.

ALD2 Sputter System Lesker
Generel description
  • Atomic Layer Deposition
  • Sputtering
Stoichiometry
  • TiN
  • TiN (can be tuned)
Film Thickness
  • 0nm - 50nm
  • 0nm - 200nm
Deposition rate
  • 0.0173 nm/cycle on a flat sample
  • 0.0232 nm/cycle on a high aspect ratio structures
  • up to 0.0625 nm/s on a flat sample
Step coverage
  • Very good
  • Not investigated
Process Temperature
  • 450oC
  • 400oC
Substrate size
  • Several small samples
  • 1-5 50 mm wafers
  • 1-5 100 mm wafers
  • 1-5 150 mm wafer
  • Several small samples
  • 100 mm wafer
  • 150 mm wafer
Allowed materials
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Al, Al2O3
  • Ti, TiO2
  • Other metals (use dedicated carrier wafer)
  • III-V materials (use dedicated carrier wafer)
  • Polymers (depending on the melting point/deposition temperature, use carrier wafer)
  • Silicon
  • Silicon oxide, silicon nitride
  • Quartz/fused silica
  • Metals
  • III-V materials (use dedicated carrier wafer)
  • Almost anything that is not toxic.
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