Specific Process Knowledge/Etch/Etching of Silicon/Si etch using ASE: Difference between revisions
| Line 191: | Line 191: | ||
*Cycle Time [s]: 3 | *Cycle Time [s]: 3 | ||
*Temperature [Deg. C] -10 | *Temperature [Deg. C] -10 | ||
Results: | |||
*Etch rate of 100nm lines: 209nm/min @etch time: 2:56min. | |||
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Etch cycle | Etch cycle | ||
| Line 206: | Line 208: | ||
*Cycle Time [s]: 3 | *Cycle Time [s]: 3 | ||
*Temperature [Deg. C] 20 | *Temperature [Deg. C] 20 | ||
Results: | |||
*Etch rate of 100nm lines: 209nm/min @etch time: 2:56min. | |||
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