Specific Process Knowledge/Characterization/XPS

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The XPS tools at DTU Nanolab

The XPS K-Alpha

The XPS Nexsa

The XPS system placed at DTU Nanolab (room 904, building 346).

In the basement under the cleanroom two X-ray Photoelectron Spectroscopy (XPS) systems are installed in room 904. They are both manufactured by Thermofisher and they enable the users to perform elemental and chemical analysis of samples. The XPS K-Alpha is a base technique instrument providing XPS analysis. The XPS Nexsa is an upgraded version with all options.

• The XPS K-Alpha page
• The XPS Nexsa page

Elemental analysis

The XPS instrument enables elemental analysis, chemical state analysis on the sample surface or deeper down by a depth profiling. A comparison about techniques and instruments used for elemental analysis at DTU Nanolab can be found on the page Element analysis.

More about the different possibilities of the XPS instrument is found here:

• The XPS technique
• Elemental analysis
• Depth profiling
• Carbon contamination

• Links to external material

Getting access to the XPS tools

Click HERE to see information on how to get access to the XPS.

Analyzing XPS spectra

The analysis of XPS spectra is an art in itself. Click on the link below to find a some examples in which the Avantage software package has been used to extract information from experiments.

• Processing XPS data

Techniques and option on the XPS tools

Equipment		K-Alpha	Nexsa
Purpose	Chemical analysis	Probing elemental composition Chemical state identification Non destructive technique Surface sensitive Depth profiling possible by ion beam etch of sample
Performance	Spot size	Can be set between 30µm - 400µm
	Probing depth	Depending on probed element. Max probe depth lies within 10-200 Å.
	Resolution	Dependent on probed elements. Concentrations down to about 0,5 atomic % can in some cases be detected.
	Charge compensation	Flood gun can be used for charge compensation of non conductive samples
	Finding structures	Choose measuring spot from camera image (magnified)
Depth profiling	Purpose	With ion beam etch the top layer of the material can be removed, to do a depth profiling
	Ion beam size	About 3x1 mm
Substrates	Substrate size	Maximum 60x60 mm
	Substrate thickness	Maximum height about 20 mm