Specific Process Knowledge/Lithography/4562: Difference between revisions
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==Exposure== | ==Exposure== | ||
Before exposure, the resist must be rehydrated. A 1-2µm thick resist rehydrates in less than 1 minute, a 6µm layer requires 15-20min, and a 10µm layer requires | Before exposure, the resist must be rehydrated. A 1-2µm thick resist rehydrates in less than 1 minute, a 6µm layer requires 15-20min, and a 10µm layer requires an hour, maybe more. | ||
After exposure, the nitrogen generated must be allowed to diffuse out, in order to avoid bubble formation (in particular before any heating). This process is similar to rehydration, but usually slower. | After exposure, the nitrogen generated must be allowed to diffuse out, in order to avoid bubble formation (in particular before any heating). This process is similar to rehydration, but usually slower. | ||