Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions

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= Deposition of Cu =
= Deposition of Cu =
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment.
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.
 
Here are some results of studies on Cu deposition processes:
 
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator''
 
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)''




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'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
'''*''' ''To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)''
==Studies of Cu deposition==
[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator''
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)''

Revision as of 13:23, 26 March 2020

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Deposition of Cu

Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment. Further down you will find some results of studies on Cu deposition processes.


E-beam evaporation (Temescal) Sputter deposition (Lesker)
General description E-beam deposition of Cu

(line-of-sight deposition)

Sputter deposition of Cu

(not line-of-sight deposition)

Pre-clean Ar ion bombardment RF Ar clean
Layer thickness 10Å to 1µm* 10Å to 1µm**
Deposition rate 1Å/s to 10Å/s ~1Å/s
Batch size
  • Up to 4x6" wafers
  • Up to 3x8" wafers (ask for holder)
  • smaller pieces
  • smaller pieces
  • Up to 1x6" wafers
Allowed materials
  • Silicon
  • Silicon oxide
  • Silicon (oxy)nitride
  • Photoresist
  • PMMA
  • Mylar
  • SU-8
  • Metals
Comment As of March 2020, Cu has not yet been deposited in this machine.

Please contact the Thin Film group to develop a process.

** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)

Studies of Cu deposition

Roughness of Cu layers - Roughness of Cu layers deposited with the Alcatel e-beam evaporator

Stress in sputtered Cu - Low stress in Cu films sputtered with the Sputter-System (Lesker)