Specific Process Knowledge/Thin film deposition/Deposition of Copper: Difference between revisions
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[[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator'' | [[/Deposition of Copper|Roughness of Cu layers]] - ''Roughness of Cu layers deposited with the Alcatel e-beam evaporator'' | ||
[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)'' | [[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cu:_Low_stress|Stress in sputtered Cu]] - ''Low stress in Cu films sputtered with the Sputter-System (Lesker)'' |
Revision as of 13:18, 26 March 2020
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Deposition of Cu
Copper can be deposited by e-beam evaporation or sputtering at Nanolab. In the chart below you can compare the different deposition equipment.
E-beam evaporation (Temescal) | Sputter deposition (Lesker) | |
---|---|---|
General description | E-beam deposition of Cu
(line-of-sight deposition) |
Sputter deposition of Cu
(not line-of-sight deposition) |
Pre-clean | Ar ion bombardment | RF Ar clean |
Layer thickness | 10Å to 1µm* | 10Å to 1µm** |
Deposition rate | 1Å/s to 10Å/s | ~1Å/s |
Batch size |
|
|
Allowed materials |
|
|
Comment | As of March 2020, Cu has not yet been deposited in this machine.
Please contact the Thin Film group to develop a process. |
** To deposit layers thicker than 600 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)
* To deposit layers thicker than 200 nm permission is required to ensure that there is enough metal (contact metal@nanolab.dtu.dk)
Studies of Cu deposition processes
Roughness of Cu layers - Roughness of Cu layers deposited with the Alcatel e-beam evaporator
Stress in sputtered Cu - Low stress in Cu films sputtered with the Sputter-System (Lesker)