Specific Process Knowledge/Thin film deposition/Deposition of NiFe: Difference between revisions
| Line 58: | Line 58: | ||
==Stress in films deposited at high temperature== | ==Stress in films deposited at high temperature== | ||
In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high a temperature is no longer used in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system]. | In 2017, Radu Malureanu measured a tensile stress of about 100-200 MPa on thin films of Invar (a type of NiFe alloy) deposited at 600 °C with varying thicknesses between 120 and 330 nm, DC power of 80 or 120 W and Ar pressure of 5 or 10 mTorr. Note that this high a temperature is no longer used in the Sputter-System (Lesker), but may be used in the [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system cluster sputter system]. | ||
Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general. | Read more about stress in thin films deposited with the Lesker sputter system [http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system here], where you will also find further reading about stress in sputtered films in general. | ||