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The Lesker CMS 18 sputter system provides thin films of varying surface roughness. This roughness was verified to be dependent on the sputtered material, sputter mode (DC or RF) and the substrate bias strength. Other probable factors include sputter power and pressure.  
The Lesker CMS 18 sputter system provides thin films of varying surface roughness. This roughness was verified to be dependent on the sputtered material, sputter mode (DC or RF) and the substrate bias strength. Other probable factors include sputter power and pressure.  


The surface roughness dependence on a range of sputter parameters can be found in the following pages for:
The surface roughness dependence on the substrate bias strength can be found in the following pages for:
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_Lesker_sputter_tool|SiO<sub>2</sub>]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_Lesker_sputter_tool|SiO<sub>2</sub>]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon/Si_sputter_in_Sputter-System_Lesker|Si]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon/Si_sputter_in_Sputter-System_Lesker|Si]]
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Tantalum/Sputtering_of_Ta|Ta]]


The "Ta" study was done on clean Si substrates. The sputter pressure was 3 mTorr using DC sputtering of a Ta target. Some O<math>_2</math> was added to wafer 25 and 26 to make Ta<math>_2</math>O<math>_5</math>. In order to get fully oxidized films, up to 30-45% O<math>_2</math> should be added. Consult the thesis of Carsten Christensen for details on Ta<math>_2</math>O<math>_5</math>.
Other studies on metals (NiFe/MnIr) show only limited effect of the substrate bias on the roughness.
 
Other studies on metals (NiFe/MnIr) show only limited effect of the substrate bias on the roughness.
 
 
 
===Ta===
{| {{table}} border="1" cellspacing="0" cellpadding="8"
| align="center" style="background:#f0f0f0;"|'''Wafer nr'''
| align="center" style="background:#f0f0f0;"|'''RF bias (W)'''
| align="center" style="background:#f0f0f0;"|'''Reactive O2 (%)'''
| align="center" style="background:#f0f0f0;"|'''Power(W)'''
| align="center" style="background:#f0f0f0;"|'''Rq (RMS) (nm)'''
| align="center" style="background:#f0f0f0;"|'''Thickness'''
|-
| blank1||0||0||180||0.209||
|-
| 16||10||0||180||0.36||56
|-
| 24||20||0||180||0.357||
|-
| 25||20||9||180||0.202||110
|-
| 26||20||5||180||0.194||95
|-
| 27||15||0||180||0.413||
|-
| 28||25||0||180||0.164||
|-
| 31||30||0||180||0.3||
|-
|}


==Stress in deposited films==
==Stress in deposited films==
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