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Specific Process Knowledge/Thin film deposition/Deposition of Tantalum: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
1,763 edits
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|-style="background:WhiteSmoke; color:black"  
|-style="background:WhiteSmoke; color:black"  
! Layer thickness
! Layer thickness
|10Å to 0.6 µm*
|10Å to 0.2 µm*
|10Å to ?
|10Å to ?
|-
|-
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|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
! Comment
! Comment
|As of August 2018, Ta has not yet been deposited in the Temescal.
| Tantalum deposition heats the chamber*
Please contact the Thin Film group to develop a process.
|
|
|}
|}


'''*'''  ''If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.''
'''*'''  ''The max thickness is limited to 200 nm as Ta deposition heats the chamber. If you wish to deposit more than that, it has to be done in several steps. The temperature on the back of a Si wafer rose to above 160 °C during deposition of 40 nm Ta even when using a cooling plate. If you wish to e-beam deposit Ta, please contact the [[mailto:thinfilm@nanolab.dtu.dk Thin film group]].''
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