Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions
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The surface roughness dependence on a range of sputter parameters can be found in the following pages for: | The surface roughness dependence on a range of sputter parameters can be found in the following pages for: | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_Lesker_sputter_tool|SiO<sub>2</sub>]] | *[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Oxide/Deposition_of_Silicon_Oxide_using_Lesker_sputter_tool|SiO<sub>2</sub>]] | ||
*[[Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon/Si_sputter_in_Sputter-System_Lesker|Si]] | |||
The "Ta" study was done on clean Si substrates. The sputter pressure was 3 mTorr using DC sputtering of a Ta target. Some O<math>_2</math> was added to wafer 25 and 26 to make Ta<math>_2</math>O<math>_5</math>. In order to get fully oxidized films, up to 30-45% O<math>_2</math> should be added. Consult the thesis of Carsten Christensen for details on Ta<math>_2</math>O<math>_5</math>. | The "Ta" study was done on clean Si substrates. The sputter pressure was 3 mTorr using DC sputtering of a Ta target. Some O<math>_2</math> was added to wafer 25 and 26 to make Ta<math>_2</math>O<math>_5</math>. In order to get fully oxidized films, up to 30-45% O<math>_2</math> should be added. Consult the thesis of Carsten Christensen for details on Ta<math>_2</math>O<math>_5</math>. | ||