Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Deposition of Silicon Oxide using Lesker sputter tool: Difference between revisions
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=Sputter deposition of SiO<sub>2</sub> using Sputter System (Lesker)= | =Sputter deposition of SiO<sub>2</sub> using Sputter System (Lesker)= | ||
SiO<sub>2</sub> can be sputter deposited with RF bias in the Sputter System (Lesker). You | SiO<sub>2</sub> can be sputter deposited with RF bias in the Sputter System (Lesker). You will find information on the pressure, max power to use and expected deposition rate on the [[Specific_Process_Knowledge/Thin_film_deposition/Lesker|Equipment page]] here in LabAdviser. To see the deposition parameters used by others, look in the [http://labmanager.dtu.dk/function.php?module=Processlog&view=editlog&machid=244 Process Log] in LabManager. | ||
Below you will find the deposition parameters and results of a study on the surface roughness and oxide insulation quality of the deposited films. | |||
==Surface roughness optimization== | ==Surface roughness optimization== | ||