Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions
No edit summary |
No edit summary |
||
Line 21: | Line 21: | ||
| style="background: #DCDCDC"| Using the OES technique to find endpoints and to diagnose plasmas | | style="background: #DCDCDC"| Using the OES technique to find endpoints and to diagnose plasmas | ||
|- | |- | ||
| style="background: LightGray"| [[/LEP| LASER Endpoint System]] | |||
| style="background: #DCDCDC"| Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers) | |||
|- | |||
|} | |} |
Revision as of 08:35, 25 March 2020
Feedback to this page: click here
Techniques, hardware and challenges common to all dry etch tools
This page contains information that is common to dry etch instruments.
Dry etch page | Description |
---|---|
Hardware comparison | Comparison of the different hardware setups |
Using carrier wafer | Processing different sizes of substrates by using a carriers: bonding or not bonding |
Optical Endpoint System | Using the OES technique to find endpoints and to diagnose plasmas |
LASER Endpoint System | Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers) |