Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

The second process chamber called PC3 consists of two KJLC Torus® 3" magnetron sputtering sources and one height-adjustable KJLC Torus® 4" magnetron sputtering source, also with the possibility of RF, DC, Pulse DC and HIPIMS sputtering. The chamber has a possibility to do the RF bias on a substrate, which can be used as substrate cleaning before the deposition or used during the deposition to alter the film properties. It is possible to do the co-sputtering (sputtering of two or more sources at the same time) as long as the sources are not sharing the same power supply. The chamber is equipped with a residual gas analyzer (RGA) that allows monitoring post-process chemical gas traces. In order to operate the analyzer, the chamber should be pumped to base pressure.