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Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

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In the graphs below the HfO<sub>2</sub> thickness vs. number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C presented. Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study.  
In the graphs below the HfO<sub>2</sub> thickness vs. number of cycles for deposition temperatures between 150 <sup>o</sup>C and 350 <sup>o</sup>C presented. Results have been obtained for <100> 150 mm Si wafers with native oxide, based on ellipsometry study.  
<gallery caption="Deposition rates of HfO2 at different temperaturs. ALD window." widths="1000px" heights="600px" perrow="1">
<gallery caption="System set-up and power supply configuration." widths="1000px" heights="600px" perrow="1">
image:Kaempe_Lesker_image_overview_main.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
image:Kaempe_Lesker_image_overview_main.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
</gallery>
</gallery>
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