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Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system: Difference between revisions

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<gallery caption="Deposition rates of HfO2 at different temperaturs. ALD window." widths="1000px" heights="600px" perrow="1">
image:PC1_photo.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
image:PC1_during_sputtering.png| Deposition rate of HfO<sub>2</sub> at 150 <sup>o</sup>C. Substrate: Silicon 6" wafer with native oxide.
</gallery>


== Sputter-System Metal-Oxide(PC3) ==
== Sputter-System Metal-Oxide(PC3) ==
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