Specific Process Knowledge/Thin film deposition/Deposition of Tungsten: Difference between revisions
New page: Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment. {| border="1" cellspacing="0" cellpadding="4" ! ! E-beam eva... |
No edit summary |
||
| Line 4: | Line 4: | ||
{| border="1" cellspacing="0" cellpadding="4" | {| border="1" cellspacing="0" cellpadding="4" | ||
! | ! | ||
! E-beam evaporation (Alcatel) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]]) | ||
! E-beam evaporation (Leybold) | ! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Leybold|Leybold]]) | ||
|- | |- | ||
| Batch size | | Batch size | ||
Revision as of 14:42, 5 February 2009
Tungsten (W) can be deposited by e-beam evaporation. In the chart below you can compare the different deposition equipment.
| E-beam evaporation (Alcatel) | E-beam evaporation (Leybold) | |
|---|---|---|
| Batch size |
|
|
| Pre-clean | RF Ar clean | Ar ion bombartment |
| Layer thickness | 10Å to 1µm | 10Å to 1000Å |
| Deposition rate | 2Å/s to 15Å/s | 1Å/s to 5Å/s |