Specific Process Knowledge/Etch/DRIE-Pegasus/DREM/DREM 3kW 100%: Difference between revisions

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| align="center" style="background:#f0f0f0;"|'''SEM image:'''
| align="center" style="background:#f0f0f0;"|'''SEM image:'''
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| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018605a591.png a591]'''
| align="center" style="background:#f0f0f0;"|'''[http://labadviser.nanolab.dtu.dk/index.php/File:S018605a591.png a591]'''
| align="center" style="background:#f0f0f0;"|'''[http://labintra.nanolab.dtu.dk/index.php/File:S018605a592.png a592]'''
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|-  
|-  
| Trench width (um)||250.32||160.36||80.48||40.42||25.42||16.66||10.43||8.38||5.02||2.95||3
| Trench width (um)||250.32||160.36||80.48||40.42||25.42||16.66||10.43||8.38||5.02||2.95||3

Revision as of 11:02, 20 March 2020

Date Substrate Information Process Information Results
Wafer info Material/ Exposed area Condi- tioning Recipe Wafer ID Comments SEM images Picoscope Numbers
27/11-2019 Medusa One AZ Mir Si / 10% stab-19 TDESC clean5, RF MU runs nanolab/ vy / DREM / DREM 3kW 100% 120 cycles or 10:0 minutes S018605 Process log entry

SEM image: a580 a582 a583 a584 a586 a587 a588 a589 a591 a592 a593
Trench width (um) 250.32 160.36 80.48 40.42 25.42 16.66 10.43 8.38 5.02 2.95 3
Etched depth (um) 144.98 143.11 138.38 126.78 116.06 105.34 93.04 87.39 76.48 65.37 62.15
Etch rate (um/min) 14.5 14.31 13.84 12.68 11.61 10.53 9.3 8.74 7.65 6.54 6.22
Etch rate (nm/cyc) 1.21 1.19 1.15 1.06 0.97 0.88 0.78 0.73 0.64 0.54 0.52
Sidewall bowing (%) -0.53 -0.63 -0.12 -0.08 0.14 0.33 0.54 0.65 0.71 0.43 0.59
Sidewall angle (degs) 92.18 92.25 91.6 91.51 91.32 91.19 91.02 90.92 90.88 90.99 90.48
Bottom bowing (%) 6.79 9.32 14.81 17.52 16.14 18.1 17.8 21.85 21.87 31.29 26.32
Aspect ratio 0.57 0.86 1.64 2.9 4.13 5.59 7.7 8.93 12.35 16.03 17.63
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