Specific Process Knowledge/Lithography: Difference between revisions
| Line 94: | Line 94: | ||
10min-5hours pr. wafer using maskless aligners. | 10min-5hours pr. wafer using maskless aligners. | ||
| | | | ||
Process depended, depends on pattern, pattern area and dose | Process depended, depends on pattern, pattern area and dose. | ||
Throughput is up to 60 wafers/hour. | |||
| | | | ||
Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I | Depends on dose, Q [µC/cm2], beam current, I [A], and pattern area, A [cm2]: t = Q*A/I | ||