Specific Process Knowledge/Lithography: Difference between revisions
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!Typical exposure time | !Typical exposure time | ||
| | | | ||
2s-30s pr. wafer | 2s-30s pr. wafer using mask aligners. | ||
10min-5hours pr. wafer using maskless aligners. | |||
| | | | ||
Process depended, depends on pattern, pattern area and dose | Process depended, depends on pattern, pattern area and dose | ||