Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions

! Sputter ([[Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300|IBE/IBSD Ionfab 300]])

! Sputter ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker]])

! PECVD ([[Specific Process Knowledge/Thin film deposition/PECVD|PECVD]])

|-  

| Sputter deposition of Si.  

|Plasma Enhanced Chemical Vapor Deposition.

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! Doping facility

|Can be doped with boron or phosphorus during deposition

|None

|None

|None

|RF Ar clean

| 

|-

|No defined limits

|

|few nm to ~500nm

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| About 5 nm/min. See more [[Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBSD_of_Si|here.]]

| Depends on process parameters, roughly 1 Å/s.  

|~6Å/s can probably be higher

|-

|Platen: 5-60 ^oC

|Wafers can be heated to 100-200°C  

|300 ^oC

|-

|Not known

|

|Medium

|-

|.

|Not tested

| 

|Not tested, but do not deposit on top of silicon

* Up to 1x6" wafers

* smaller pieces

|

* Several small samples

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*Same materials as on the allowed materials below

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* Silicon wafers

* Photoresist

* Metals  

|

See the cross contamination sheet for PECVD3

| The system is used both for IBSD and IBE. Si deposition can only be performed when it is set up for IBSD.

|  

|Only in PECVD3

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