Specific Process Knowledge/Thin film deposition/Si sputter in Wordentec: Difference between revisions
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== Silicon sputter== | == Silicon sputter== | ||
Silicon can be sputter deposited in [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec.]] | Silicon can be sputter deposited in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec.]] | ||
Revision as of 14:20, 19 March 2020
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Silicon sputter
Silicon can be sputter deposited in the Wordentec.
Parameters
Listed below are tried parameters, that can be used during deposition. The process parameters in the table below can be used as started values, run a test process to be sure that you get the right thickness.
Do not use the power more than 180 W without consulting staff, since the Si target could break into a lot of small pieces.
| Settings 1 | Settings 2 | |
|---|---|---|
| Process type | Sputtering | Sputtering |
| Power | 130W | 170W |
| Sputter pressure | 5*10-3 mbar | 1*10-2 mbar |
| Rate | About 0.7 Å/s | About 0.6 Å/s |
In November 2018 Rebecca Ettlinger and Patama Pholprasit tested Si sputter deposition in the Wordentec at 500 W with a low sputter pressure of 2*10-3 mbar together with Yannick Seis. The aim was a better uniformity of the sputtered film. See details in the process log. It is thus possible to use a higher power together with a lower pressure, but please do not do this without consulting the Thin Film group.