Sputtering of Ti in Wordentec: Difference between revisions
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== Deposition rate == | == Deposition rate == | ||
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'''Pressure 1*10<sup>-2</sup> mbar, Power 300 W''' | '''Pressure 1*10<sup>-2</sup> mbar, Power 300 W''' | ||
The rate is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018). | The rate in the [[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]] is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018). | ||
Revision as of 13:39, 19 March 2020
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Deposition rate
The deposition rate will change with the settings for pressure and power.
Pressure 1*10-2 mbar, Power 300 W
The rate in the Wordentec is established to be 1.7 Å/s (in the centre of the wafer, 1.3 Å/s at the edge) (data from before 2018).