Specific Process Knowledge/Characterization/Lifetime scanner MDPmap: Difference between revisions
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length, L, can be measured also at very low injection levels with a spatial resolution limited | length, L, can be measured also at very low injection levels with a spatial resolution limited | ||
only by the diffusion length of the charge carriers. | only by the diffusion length of the charge carriers. | ||
'''Range of lifetimes''': 20 ns to several ms | |||
'''The resistivity range for lifetime measurements''' 0.2 to 100 Ohm.cm, p/n | |||
'''Material''': Silicon, epitaxial layers, partially or fully processed wafers, compound semiconductors and beyond. | |||
'''Measureable properties''': Carrier lifetime (steady state or non equilibrium (µ -PCD) selectable), photoconductivity (steady state) microwave Photoconductance Decay (µ-PCD) | |||
'''The user manual, the APV and contact information can be found in LabManager:''' | '''The user manual, the APV and contact information can be found in LabManager:''' | ||