Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions
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*Al<sub>2</sub>O<sub>3</sub> - Thermal Al<sub>2</sub>O<sub>3</sub> (mainly backup for ALD1) and Al<sub>2</sub>O<sub>3</sub> using plasma | *Al<sub>2</sub>O<sub>3</sub> - Thermal Al<sub>2</sub>O<sub>3</sub> (mainly backup for ALD1) and Al<sub>2</sub>O<sub>3</sub> using plasma | ||
*TiO<sub>2</sub> (amorphous or anatase) - Thermal TiO<sub>2</sub> (mainly backup for ALD1) and TiO<sub>2</sub> using plasma | *TiO<sub>2</sub> (amorphous or anatase) - Thermal TiO<sub>2</sub> (mainly backup for ALD1) and TiO<sub>2</sub> using plasma | ||
*SiO<sub>2</sub> - SiO<sub>2</sub> using plasma | *SiO<sub>2</sub> - SiO<sub>2</sub> using plasma (<i>March 2020: SiO<sub>2</sub> depositions gives very bad results</i>) | ||
*HfO<sub>2</sub> - Thermal HfO<sub>2</sub> (mainly backup for ALD1) | *HfO<sub>2</sub> - Thermal HfO<sub>2</sub> (mainly backup for ALD1) | ||
*AlN - AlN using plasma | *AlN - AlN using plasma | ||
*TiN - Thermal TiN and | *TiN - Thermal TiN and TiN using plamsa | ||
Is is not possible to deposit oxides and nitrides at the same time | Is is not possible to deposit oxides and nitrides at the same time | ||
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*O<sub>2</sub> | *O<sub>2</sub> | ||
*NH<sub>3</sub> | *NH<sub>3</sub> | ||
* | *H<sub>2</sub> | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates | ||