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Specific Process Knowledge/Thermal Process/A1 Bor Drive-in furnace: Difference between revisions

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The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.  
The furnace is mostly used for wet and dry thermal oxidation of silicon wafers. The oxidation recipes are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.  


The purpose of the boron doping is to make conductive structures, etch stop layers etc. For the pre-deposition process boron-nitride source wafers are used as the doping source to dope silicon wafers. There are only a few source wafers available, i.e. it is not possible to dope an entire batch of 30 wafers, but both sides of the source wafers are available for doping. It is necessary to activate the source wafers before use by heating them for 1 hour at the temperature needed during the pre-deposition (but never at a temperatures lower than 1050 C). During the pre-deposition a boron phase layer is created on the silicon wafers. This layer can be removed in BHF, if argon is used instead of nitrogen for the pre-deposition (at temperatures higher then 1050 C), otherwise the wafers have to be oxidized before the BHF etch.
The purpose of the boron doping is to make conductive structures, etch stop layers etc. For pre-deposition of silicon wafers, boron-nitride source wafers are used as doping source. There are only a few source wafers available, i.e. it is not possible to dope an entire batch of 30 wafers, but both sides of the source wafers are available for doping. It is necessary to activate the source wafers before use by heating them for 1 hour at the temperature needed during the pre-deposition (but never at a temperatures lower than 1050 C). During the pre-deposition a boron phase layer is created on the silicon wafers. This layer can be removed in BHF, if argon is used instead of nitrogen for the pre-deposition (at temperatures higher then 1050 C), otherwise the wafers have to be oxidized before the BHF etch. When the boron phase layer has been removed, the wafers can go directly into the furnace again for a drive-in process with or without an oxide growth.


The Boron Drive-in and Pre-dep furnace is the top furnace tube in the furnace A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager before you use the furnace. Before boron pre-deposition, also the source wafers and a dedicated carbide boat have to be RCA cleaned.
The Boron Drive-in and Pre-dep furnace is the top furnace tube in the furnace A-stack positioned in cleanroom B-1. The furnaces in the A-stack are the cleanest of all furnaces in the cleanroom. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and please check the cross contamination information in LabManager, before you use the furnace. Before boron pre-deposition, also the source wafers and a dedicated carbide boat have to be RCA cleaned.




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