Specific Process Knowledge/Etch/DRIE-Pegasus/picoscope: Difference between revisions
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! colspan="3" |Process A Step 2 parameters | ! colspan="3" |[[Specific Process Knowledge/Etch/DRIE-Pegasus/processA|Process A ]]Step 2 parameters | ||
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! Parameter | ! Parameter |
Revision as of 12:17, 17 March 2020
Process optimization using the Picoscope
The original standard recipes on Pegasus 1 differ in many ways. The second step of one of them is listed below:
Process A Step 2 parameters | ||
---|---|---|
Parameter | Etch | Dep |
Gas flow (sccm) | SF6 350 (1.5 s), 550 | C4F8 200 |
Cycle time (secs) | 7.0 | 4.0 |
Pressure (mtorr) | 25 (1.5 s), 150 | 25 |
Coil power (W) | 2800 | 2000 |
Platen power (W) | 140 (1.5) 45 | 0 |
Common | Temperature 20 degs |
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Left: Recorded with the SPTS software
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Right: Recorded with the Picoscope
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Left: Recorded with the SPTS software
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Right: Recorded with the Picoscope