Specific Process Knowledge/Thin film deposition/Deposition of Molybdenum: Difference between revisions

Revision as of 11:25, 17 March 2020

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Molybdenum can be deposited by e-beam evaporation or sputtering. In the chart below you can compare the different deposition equipment.

	E-beam evaporation (Temescal)	Sputter deposition (Lesker)
General description	E-beam deposition of Mo (line-of-sight deposition)	Sputter deposition of Mo (not line-of-sight)
Pre-clean	Ar ion source	RF Ar clean
Layer thickness	10Å to 0.2 µm*	10Å to 500 Å
Deposition rate	1Å/s to 10Å/s	Depends on process parameters, roughly about 1 Å/s
Batch size	Up to 4x6" wafers Up to 3x8" wafers (ask for holder) Many smaller pieces	Pieces or 1x4" wafer or 1x6" wafer
Allowed materials	Silicon Silicon oxide Silicon (oxy)nitride Photoresist PMMA Mylar Metals See also the cross-contamination sheet	Silicon Silicon oxide Silicon nitride Silicon (oxy)nitride Photoresist PMMA Mylar SU-8
Comment	As of August 2018, Mo has not yet been deposited in the Temescal. Please contact the Thin Film group to develop a process.

* Depending on the amount of heating during Mo deposition, which we will discover during process development.

@@ Line 26: / Line 26: @@
 |-style="background:WhiteSmoke; color:black"
 ! Layer thickness
-|10Å to 0.6 µm*
+|10Å to 0.2 µm*
 |10Å to 500 Å
 |-
@@ Line 78: / Line 78: @@
-'''*'''  ''If depositing more than 600 nm in total, write to metal@danchip.dtu.dk well in advance to ensure enough material is present.''
+'''*'''  ''Depending on the amount of heating during Mo deposition, which we will discover during process development.''