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The correct way to determine the best dose-defocus settings is to generate a so-called Bossung plot (known from projection lithography), which plots the printed linewidth as a function of dose and defocus. From this, the most stable region of parameter space is chosen, i.e. the region where the linewidth changes the least when dose and defocus changes. Any deviation from the design linewidth may be corrected using the CD bias parameter. This typically involves SEM imaging of resist cross-sections, and quickly becomes time consuming. However, in most cases, inspection of a dose-defocus matrix (easily generated using the series exposure function) in an optical microscope will get you most of the way.  
The correct way to determine the best dose-defocus settings is to generate a so-called Bossung plot (known from projection lithography), which plots the printed linewidth as a function of dose and defocus. From this, the most stable region of parameter space is chosen, i.e. the region where the linewidth changes the least when dose and defocus changes. Any deviation from the design linewidth may be corrected using the CD bias parameter. This typically involves SEM imaging of resist cross-sections, and quickly becomes time consuming. However, in most cases, inspection of a dose-defocus matrix (easily generated using the series exposure function) in an optical microscope will get you most of the way.  
'''Data represent dose-defocus tests on Si using optical autofocus unless otherwise stated'''
{|border="1" cellspacing="1" cellpadding="7" style="text-align:left;"
|-
|-
|-style="background:silver; color:black"
|
!Thickness
!Laser
!Exposure mode
!Dose
!Defoc
!Resolution
!Comments
|-
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="2"| AZ 5206E
|rowspan="2"| 0.5 µm
|rowspan="2"| 375 nm
| Fast
| 60 mJ/cm<sup>2</sup>
| -6
| 1 µm (not optimized)
| Dev: 2xSP30s
|-style="background:WhiteSmoke; color:black"
| Quality
| 60 mJ/cm<sup>2</sup>
| -6
| ~750 nm (not optimized)
| Dev: 2xSP30s
|-
|-
|-style="background:LightGrey; color:black"
!rowspan="3"| AZ 5214E
|rowspan="3"| 1.5 µm
| 405 nm
| Fast
| 90 mJ/cm<sup>2</sup>
| -2
| 1-2 µm
| Dev: SP60s
|-style="background:LightGrey; color:black"
|rowspan="2"| 375 nm
| Fast
| 65 mJ/cm<sup>2</sup>
| 2
| ~1 µm
| Dev: SP60s
|-style="background:LightGrey; color:black"
| Quality
| 65 mJ/cm<sup>2</sup>
| 2
| ~750 nm
| Dev: SP60s
|-
|-
|-style="background:WhiteSmoke; color:black"
!rowspan="3"| AZ MiR 701
|rowspan="3"| 1.5 µm
| 405 nm
| Fast
| 200 mJ/cm<sup>2</sup>
| -5
| ~1 µm (not optimized)
| PEB: 60s@110°C, Dev: SP60s
|-style="background:WhiteSmoke; color:black"
|rowspan="2"| 375 nm
| Fast
| 170 mJ/cm<sup>2</sup>
| -5
| 1 µm
| PEB: 60s@110°C, Dev: SP60s
|-style="background:WhiteSmoke; color:black"
| Quality
| 180 mJ/cm<sup>2</sup>
| -6 (Feb 2019) <br> -2 (Apr 2019)
| <750 nm
| PEB: 60s@110°C, Dev: SP60s <br> Large structures probably over-exposed
|-
|-
|-style="background:LightGrey; color:black"
!rowspan="2"| AZ nLOF 2020
|rowspan="2"| 2 µm
|rowspan="2"| 375 nm
| Fast
| 400 mJ/cm<sup>2</sup>
| 5
| ~1 µm (not optimized)
| PEB: 60s@110°C, Dev: SP60s <br> Probably under-exposed
|-style="background:LightGrey; color:black"
| Quality
| 400 mJ/cm<sup>2</sup>
| 0
| 1 µm
| PEB: 60s@110°C, Dev: SP60s <br> Probably under-exposed
|-
|}
<br clear="all" />


==Exposure mode==
==Exposure mode==
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