Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | *[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | ||
== Manual for the furnace computer to the A, B, C and E stack furnaces == | |||
The A, B, C and E stack furnaces can be controlled either from a touch screen by each furnace or from a furnace computer. The user manual for the furnace computer can be found here: | |||
[[media:Furnace_computer_manual.pdf|Manual for furnace computers for the A, B, C and E stack furnaces]] | |||
==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||