Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions
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AlN films can be deposited by using the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] or the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. | AlN films can be deposited by using the [[Specific Process Knowledge/Thin film deposition/Lesker|Lesker Sputter System]] or the [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD2]]. | ||
In the Lesker sputter system AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition. | In the Lesker sputter system AlN can be either deposited by using sputtering method with AlN target or reactive sputtering method with Al target in mixtures of argon and nitrogen or using atomic layer deposition . | ||
==Comparison of the methods for deposition of Silicon Oxide== | ==Comparison of the methods for deposition of Silicon Oxide== | ||