Specific Process Knowledge/Direct Structure Definition: Difference between revisions
| Line 123: | Line 123: | ||
|Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. | |Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used. | ||
|A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. | |A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine. | ||
|Fabricate two blank shims (usually from aluminum foil, electroplated, nickel or milled aluminum) to protect the upper and lower press plate from polymer or other material runoff. If uniformity is an issue, the suggested procedure is to make two x PDMS foils, in order to make the force distribution as uniform as possible. The foils should be placed between the protective SHIM/CHUCK and the pressure plates | |Fabricate two blank shims (usually from aluminum foil, electroplated, nickel or milled aluminum) to protect the upper and lower press plate from polymer or other material runoff. If uniformity is an issue, the suggested procedure is to make two x PDMS foils, in order to make the force distribution as uniform as possible. The foils should be placed between the protective SHIM/CHUCK and the pressure plates. The stamp/shim with the pattern can be fabricated in variety of materials (eg. metals/polymers), using variety of different manufacturing techniques. If in doubt of which technique is right for your sample, contact for the machine responsible personel | ||
|A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Pattern Design| Clewin5]] can convert GDS and CIF files to DXF format. | |A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Pattern Design| Clewin5]] can convert GDS and CIF files to DXF format. | ||
| Line 135: | Line 135: | ||
|medium: 5-10 wafers/hour depending on imprint time | |medium: 5-10 wafers/hour depending on imprint time | ||
|Fast: Typically 10-300 samples/hour | |Fast: Typically 10-300 samples/hour | ||
| | |Medium: Typically 6-15 samples/hour | ||
|medium-slow: 0.1-1 wafers/hour depending on pattern complexity | |medium-slow: 0.1-1 wafers/hour depending on pattern complexity | ||
|medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s) | |medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s) | ||
| Line 146: | Line 146: | ||
|100nm - µm | |100nm - µm | ||
|nm - mm | |nm - mm | ||
| | |nm - mm | ||
|100µm - wafer size | |100µm - wafer size | ||
|saw blade width 60µm or 200µm. Has to cut full diameter of wafer. | |saw blade width 60µm or 200µm. Has to cut full diameter of wafer. | ||
| Line 157: | Line 157: | ||
|Dry Etch back (RIE), ?? Nano Imprint Lithography | |Dry Etch back (RIE), ?? Nano Imprint Lithography | ||
|Sprue/runner has to be broken or cut off. | |Sprue/runner has to be broken or cut off. | ||
| | |The pressure plates must be cooled off and cleaned | ||
|Sample cleaning with Ultrasound etc. | |Sample cleaning with Ultrasound etc. | ||
|None | |None | ||
| Line 168: | Line 168: | ||
|2D. different depths possible | |2D. different depths possible | ||
|2D. Different depths possible. | |2D. Different depths possible. | ||
| | |2D. Different depths possible. | ||
|2D. different depths possible | |2D. different depths possible | ||
|1D. different depths possible | |1D. different depths possible | ||
| Line 190: | Line 190: | ||
*Microscope slide tool: 26x76 mm2 | *Microscope slide tool: 26x76 mm2 | ||
| | | | ||
* | *<nowiki>#</nowiki> small samples | ||
*<nowiki>#</nowiki> 50 mm wafers | |||
*<nowiki>#</nowiki> 100 mm wafers | |||
*<nowiki>#</nowiki> 150 mm wafers | |||
*<nowiki>#</nowiki> 200 mm wafers | |||
*<nowiki>#</nowiki> odd sized samples, contact for the machine responsible personel | |||
| | | | ||
*small samples | *small samples | ||