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Specific Process Knowledge/Direct Structure Definition: Difference between revisions

Darcat (talk | contribs)
Darcat (talk | contribs)
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|Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used.  
|Sample with polymer.<br> A stamp with the wanted pattern, usually in Si or SiO\rm{_2} however other materials could also be used.  
|A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine.
|A stamp/shim with the wanted pattern, usually in Ni or Al, cut out to fit in the injection moulding machine.
|øø
|Fabricate two blank shims (usually from aluminum foil, electroplated, nickel or milled aluminum) to protect the upper and lower press plate from polymer or other material runoff. If uniformity is an issue, the suggested procedure is to make two x PDMS foils, in order to make the force distribution as uniform as possible. The foils should be placed between the protective SHIM/CHUCK and the pressure plates
 
|A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Pattern Design| Clewin5]] can convert GDS and CIF files to DXF format.  
|A 2D CAD model file in DXF or CONX format. [[Specific Process Knowledge/Pattern Design| Clewin5]] can convert GDS and CIF files to DXF format.  
|Number of lines and pitch in each direction. Your wafer.
|Number of lines and pitch in each direction. Your wafer.
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|medium: 5-10 wafers/hour depending on imprint time
|medium: 5-10 wafers/hour depending on imprint time
|Fast: Typically 10-300 samples/hour
|Fast: Typically 10-300 samples/hour
|Fabricate two blank shims (usually from aluminum foil, electroplated, nickel or milled aluminum) to protect the upper and lower press plate from polymer or other material runoff. If uniformity is an issue, the suggested procedure is to make two x PDMS foils, in order to make the force distribution as uniform as possible. The foils should be placed between the protective SHIM/CHUCK and the pressure plates
|øø
|medium-slow: 0.1-1 wafers/hour depending on pattern complexity
|medium-slow: 0.1-1 wafers/hour depending on pattern complexity
|medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s)
|medium: ½-3 wafers/hour depending on material and # of cuts (Si cuts at 5mm/s, SiO2 at 0.5-1 mm/s)