Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions
| Line 47: | Line 47: | ||
| | | | ||
|10.6 | |10.6 | ||
|[[SiO2 DOE|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab'' | |[[/SiO2 DOE|Process Development]] ''dec2019/jan2020 by Qugig and bghe @nanolab'' | ||
|- | |- | ||
!Lower etch rate, medium selectivity to resist | !Lower etch rate, medium selectivity to resist | ||