Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions
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{| border="1" style="text-align: center; width: | {| border="1" style="text-align: center; width: 1000px; height: 350px;" | ||
! colspan="8" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min | ! colspan="8" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min | ||
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|10.6 | |10.6 | ||
| | |''Done dec2019/jan2020 by Qugig@nanolab and bghe@nanolab'' | ||
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!Lower etch rate, medium selectivity to resist | !Lower etch rate, medium selectivity to resist | ||
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|~12 | |~12 | ||
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|[[/Details SiO2_100|Images and reproducibility]] | |''Done dec2019/jan2020 by Qugig@nanolab and bghe@nanolab'' [[/Details SiO2_100|Images and reproducibility]] | ||
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!Si3N4Ti | !Si3N4Ti | ||