Jump to content

Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
Line 10: Line 10:


{| border="1" style="text-align: center; width: 600px; height: 350px;"
{| border="1" style="text-align: center; width: 600px; height: 350px;"
! colspan="7" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min
! colspan="8" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min
|-
|-
! scope="row" width="15%" |Process Name
! scope="row" width="15%" |Process Name
Line 19: Line 19:
! width="10%" |ZEP520A
! width="10%" |ZEP520A
! width="10%" |Negative DUV: UVN 2030-0.5
! width="10%" |Negative DUV: UVN 2030-0.5
! width="40%" |Comments/links
|-
|-
!SiO2_602  
!SiO2_602  
Line 31: Line 32:
|29'''<sup>{(2)}</sup>'''
|29'''<sup>{(2)}</sup>'''
|36'''<sup>{(3)}</sup>'''
|36'''<sup>{(3)}</sup>'''
|&nbsp;
|&nbsp;
|&nbsp;
|-
|-
Line 45: Line 47:
|&nbsp;
|&nbsp;
|10.6
|10.6
|&nbsp;
|-
|-
!Lower etch rate, medium selectivity to resist
!Lower etch rate, medium selectivity to resist
Line 57: Line 60:
|&nbsp;
|&nbsp;
|~12
|~12
|&nbsp;
|&nbsp;
|&nbsp;
|-
|-
Line 68: Line 72:
|&nbsp;
|&nbsp;
|38
|38
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;
|&nbsp;