Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions
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{| border="1" style="text-align: center; width: 600px; height: 350px;" | {| border="1" style="text-align: center; width: 600px; height: 350px;" | ||
! colspan=" | ! colspan="8" style="text-align: center;" style="background: #efefef;" | CHF<sub>3</sub>/O<sub>2</sub> etch rates, nm/min | ||
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! scope="row" width="15%" |Process Name | ! scope="row" width="15%" |Process Name | ||
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! width="10%" |ZEP520A | ! width="10%" |ZEP520A | ||
! width="10%" |Negative DUV: UVN 2030-0.5 | ! width="10%" |Negative DUV: UVN 2030-0.5 | ||
! width="40%" |Comments/links | |||
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!SiO2_602 | !SiO2_602 | ||
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|29'''<sup>{(2)}</sup>''' | |29'''<sup>{(2)}</sup>''' | ||
|36'''<sup>{(3)}</sup>''' | |36'''<sup>{(3)}</sup>''' | ||
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|10.6 | |10.6 | ||
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!Lower etch rate, medium selectivity to resist | !Lower etch rate, medium selectivity to resist | ||
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|~12 | |~12 | ||
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|38 | |38 | ||
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