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Specific Process Knowledge/Etch/III-V RIE/III V RIE ETCHES: Difference between revisions

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Bghe (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, Bureaucrats, Administrators
7,318 edits
Line 33: Line 33:
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!?1 (high selectivity to resist
!High selectivity to resist
!
!
*CHF<sub>3</sub>-flow: 17 sccm,  
*CHF<sub>3</sub>-flow: 17 sccm,  
Line 46: Line 46:
|10.6
|10.6
|-
|-
!?2
!Lower etch rate, medium selectivity to resist
!
!
*CHF<sub>3</sub>-flow: 16 sccm,  
*CHF<sub>3</sub>-flow: 17 sccm,  
*O<sub>2</sub>-flow: 2 sccm,
*O<sub>2</sub>-flow: 0 sccm,
*Power = 60 W,
*Power = 100 W,
*Vbias = 325 V,
*Vbias = ? V,
*Process pressure = 100 mTorr
*Process pressure = 20 mTorr
|30'''<sup>{(1)}</sup>'''
|49-62 (depending on conditioning)
|&nbsp;
|&nbsp;
|&nbsp;
|29'''<sup>{(2)}</sup>'''
|~12
|36'''<sup>{(3)}</sup>'''
|&nbsp;
|&nbsp;
|-
|-
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