Specific Process Knowledge/Thermal Process/A2 Gate Oxide furnace: Difference between revisions
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[[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1]] | [[Image:borpredep.jpg|thumb|300x300px|Gate Oxide furnace (A2). Positioned in cleanroom B-1]] | ||
The Gate Oxide furnace (A2) is a Tempress horizontal furnace | The Gate Oxide furnace (A2) is a Tempress horizontal furnace for oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin thermal oxide located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor). | ||
The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature. | Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature. | ||
This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace. | This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace. | ||
Revision as of 15:10, 3 February 2020
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Gate Oxide furnace (A2)
The Gate Oxide furnace (A2) is a Tempress horizontal furnace for oxidation of very clean silicon wafers. For instance gate oxide layers can be grown in the furnace. A gate oxide is very thin thermal oxide located over the gate or active region of individual resistors in a MOSFET (metal-oxide field effect semiconductor transistor).
Only dry oxidation can be done in the furnace. The oxidation recipes on the furnace are named e.g. "DRY1000", where "DRY" indicates that it is a dry oxidation process, and the number indicates the oxidation temperature.
This furnace is the second furnace tube in the furnace A-stack positioned in cleanroom B-1. The Gate Oxide furnace is the cleanest of all furnaces in the cleanroom, i.e. wafers will metal bulk contanination (e.g. wafers that have exposed to plasma) are not allowed in the furnace. Please be aware of that all wafers have to be RCA cleaned before they enter the furnace, and check the cross contamination information in LabManager before you use the furnace.
The user manual, technical information and contact information can be found in LabManager:
Process knowledge
| Purpose |
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Oxidation:
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|---|---|---|
| Performance | Film thickness |
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| Process parameter range | Process Temperature |
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| Process pressure |
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| Gasses on the system |
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| Substrates | Batch size |
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| Substrate materials allowed |
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