Specific Process Knowledge/Thermal Process/C1 Furnace Anneal-oxide: Difference between revisions

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 *Oxidation of 100 mm and 150 mm wafers
 *Annealing of 100 mm and 150 mm wafers
-|style="background:WhiteSmoke; color:black"|Oxidation:
+|style="background:WhiteSmoke; color:black"|
-*Dry
+Annealing:
-*Wet: with RASIRC steamer
+*Using N<sub>2</sub>:
+Oxidation:
+*Dry oxidation using O<sub>2</sub>:
+*Wet oxidation using H<sub>2</sub>: O vapour generated by a RASIRC steamer
 |-
 !style="background:silver; color:black" align="center"|Performance
 |style="background:LightGrey; color:black"|Film thickness
 |style="background:WhiteSmoke; color:black"|
-*Dry SiO<sub>2</sub>: 50Å  to ~2000Å (it takes too long to grow a thicker oxide)
+*Dry SiO<sub>2</sub>: ~ 0 nm  to 300 nm (it takes too long to grow a thicker dry oxide layers)
-*Wet SiO<sub>2</sub>: 50Å to ~5µm (it takes too long to grow a thicker oxide)
+*Wet SiO<sub>2</sub>: ~ 0 nm to ~ 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C)
 |-
 !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
 |style="background:LightGrey; color:black"|Process Temperature
 |style="background:WhiteSmoke; color:black"|
-*800-1150 <sup>o</sup>C
+*800-1100 <sup>o</sup>C
 |-
 |style="background:LightGrey; color:black"|Process pressure
 |style="background:WhiteSmoke; color:black"|
-*1 atm
+*1 atm (no vacuum)
 |-
 |style="background:LightGrey; color:black"|Gas flows
@@ Line 64: / Line 67: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*1-30 100 mm or 150 mm wafers (or 50 mm wafers) per run
+*1-30 100 mm or 150 mm wafers (or 50 mm wafers)
 |-
 | style="background:LightGrey; color:black"|Substrate materials allowed
 |style="background:WhiteSmoke; color:black"|
-*New silicon wafers (No need RCA cleaned)
+*New silicon wafers
-*Silicon wafers with layers of silicon oxide or silicon (oxy)nitride (RCA cleaned)
+*Silicon wafers with layers of silicon oxide or silicon nitride (RCA cleaned)
 *Wafers from the LPCVD furnaces
 *Wafers from PECVD4
 |-
 |}