Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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*Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | *Dry oxide:~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | ||
*Wet oxide: ~ 0 nm to 3 µm (23 hours oxidation at 1100 <sup>o</sup>C) | *Wet oxide: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 <sup>o</sup>C) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||