Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano/Sinan332: Difference between revisions

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== The Sinano3.32 recipe ==
== The Sinano3.32 recipe ==
<!-- revised 1/6-2015 by jmli -->
<!-- revised 1/6-2015 by jmli -->

Revision as of 14:04, 20 January 2020

The Sinano3.32 recipe

Recipe Sinano3.32
Recipe Gas BCl3 5 sccm, HBR 15 sccm
Pressure 2 mTorr, Strike 3 secs @ 5 mTorr
Power 900 W CP, 30 W PP
Temperature 50 degs
Hardware 100 mm Spacers
Time 60, 120 and 180 secs
Conditions Run ID 465, 466 and 467
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep
  • The results of the Sinano3.32 recipe
  • The 30 nm trenches etched 60 seconds
    The 30 nm trenches etched 60 seconds
  • The 60 nm trenches etched 60 seconds
    The 60 nm trenches etched 60 seconds
  • The 90 nm trenches etched 60 seconds
    The 90 nm trenches etched 60 seconds
  • The 120 nm trenches etched 60 seconds
    The 120 nm trenches etched 60 seconds
  • The 150 nm trenches etched 60 seconds
    The 150 nm trenches etched 60 seconds
  • The 30 nm trenches etched 120 seconds
    The 30 nm trenches etched 120 seconds
  • The 60 nm trenches etched 120 seconds
    The 60 nm trenches etched 120 seconds
  • The 90 nm trenches etched 120 seconds
    The 90 nm trenches etched 120 seconds
  • The 120 nm trenches etched 120 seconds
    The 120 nm trenches etched 120 seconds
  • The 150 nm trenches etched 120 seconds
    The 150 nm trenches etched 120 seconds
  • The 30 nm trenches etched 180 seconds
    The 30 nm trenches etched 180 seconds
  • The 60 nm trenches etched 180 seconds
    The 60 nm trenches etched 180 seconds
  • The 90 nm trenches etched 180 seconds
    The 90 nm trenches etched 180 seconds
  • The 120 nm trenches etched 180 seconds
    The 120 nm trenches etched 180 seconds
  • The 150 nm trenches etched 180 seconds
    The 150 nm trenches etched 180 seconds


After 60 seconds
Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 44 57 59 64 63 57 8
Sidewall angle degs 73 74 76 78 73 75 2
CD loss nm/edge -4 -15 -14 -12 -32 -15 10
CD loss foot nm/edge 1 -1 0 -1 -4 -1 2
Bowing 4 6 1 6 1 4 2
Bottom curvature -14 -9 -5 -1 -1 -6 5
Zep etch rate nm/min 33


After 120 seconds
Nominal trench line width ' 30 60 90 120 150 Average Std. dev.
Etch rate nm/min 48 60 67 69 71 63 9
Sidewall angle degs 78 78 76 75 75 76 1
CD loss nm/edge -1 -12 -15 -13 -30 -14 10
CD loss foot nm/edge 5 1 -1 -1 -3 0 3
Bowing 7 8 16 20 19 14 6
Bottom curvature -22 -12 6 8 5 -3 13
Zep etch rate nm/min 22


After 180 seconds
Nominal trench line width ' 30 60 90 150 Average Std. dev.
Etch rate nm/min 43 59 65 70 59 12
Sidewall angle degs 82 80 79 77 79 2
CD loss nm/edge -5 -16 -18 -30 -17 10
CD loss foot nm/edge 1 -3 -4 -3 -2 2
Bowing 9 19 24 31 21 9
Bottom curvature -30 -16 -8 13 -10 18
Zep etch rate nm/min 19
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