Specific Process Knowledge/Lithography/4562: Difference between revisions

Revision as of 16:35, 12 December 2019 view source Taran (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891 3,528 edits →Exposure ← Older edit		Revision as of 16:35, 12 December 2019 view source Taran (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab307-labadviser-users-34891 3,528 edits →Exposure Newer edit →
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	Before exposure, the resist must be rehydrated. A 1-2µm thick resist rehydrates in less than 1 minute, a 6µm layer requires 15-20min, and a 10µm layer requires up to an hour.		Before exposure, the resist must be rehydrated. A 1-2µm thick resist rehydrates in less than 1 minute, a 6µm layer requires 15-20min, and a 10µm layer requires up to an hour.

	After exposure, the nitrogen generated must be allowed to diffuse out, in order to avoid bubble formation (in particular before any heating). This process is similar to rehydration, but usually slower.		After exposure, the nitrogen generated must be allowed to diffuse out, in order to avoid bubble formation (in particular before any heating). This process is similar to rehydration, but usually slower.