Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||
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*It is recommended to have a of silicon oxide layer between the silicon substrate and the nitride layer to reduce the stress level between the layers. The silicon nitride is then expected to have less tendency to break. | *It is recommended to have a of silicon oxide layer between the silicon substrate and the nitride layer to reduce the stress level between the layers. The silicon nitride is then expected to have less tendency to break. | ||
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== Rules for storage and RCA cleaning of wafers to the B2 and E3 furnaces == | |||
*[[Specific_Process_Knowledge/Thermal_Process/Storage_and_cleaning_of_wafer_to_the_A,_B,_C_and_E_stack_furnaces|Storage and cleaning of wafer to the B2 and E3 furnaces]] | |||