Specific Process Knowledge/Thin film deposition/Furnace LPCVD Nitride: Difference between revisions
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*[[/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of low stress nitride using the 6" LPCVD nitride furnace ]] | *[[/Deposition of low stress nitride using the 6" LPCVD nitride furnace|Deposition of low stress nitride using the 6" LPCVD nitride furnace ]] | ||
*[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | *[[/Using LPCVD silicon nitride as a masking material for KOH etching|Using LPCVD silicon nitride as a masking material for KOH etching]] | ||
== Rules for storage and RCA cleaning of wafers to the B stack furnaces == | |||
*[[Specific Process Knowledge/Thermal Process/Storage and cleaning of wafer to the A, B, C and E stack furnacess|Storage and cleaning of wafer to the B stack furnaces]] | |||
==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||